APT20M20LLLG
MOSFET. Datasheet pdf. Equivalent
Type Designator: APT20M20LLLG
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 568
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 100
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 110
nC
trⓘ - Rise Time: 40
nS
Cossⓘ -
Output Capacitance: 2180
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02
Ohm
Package:
TO-264
APT20M20LLLG
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT20M20LLLG
Datasheet (PDF)
..1. Size:160K apt
apt20m20b2llg apt20m20lllg.pdf 
APT20M20B2LLAPT20M20LLL200V 100A 0.020R POWER MOS 7 MOSFETT-MAXPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong wi
5.1. Size:157K apt
apt20m20b2fllg apt20m20lfllg.pdf
APT20M20B2FLLAPT20M20LFLL200V 100A 0.020RFREDFET POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching loss
5.2. Size:254K inchange semiconductor
apt20m20lfll.pdf
isc N-Channel MOSFET Transistor APT20M20LFLLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.02(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
6.1. Size:71K apt
apt20m20b2fll.pdf
APT20M20B2FLLAPT20M20LFLL200V 100A 0.020WTMFREDFET POWER MOS 7B2FLLPower MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchingT-MAXTO-264losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with excepti
6.2. Size:69K apt
apt20m20b2ll.pdf
APT20M20B2LLAPT20M20LLL200V 100A 0.020WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast
6.3. Size:60K apt
apt20m20jll.pdf
APT20M20JLL200V 106A 0.020 WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's
6.4. Size:62K apt
apt20m20jfll.pdf
APT20M20JFLL200V 106A 0.020WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent wi
6.5. Size:375K inchange semiconductor
apt20m20b2fll.pdf
isc N-Channel MOSFET Transistor APT20M20B2FLLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.02(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
6.6. Size:375K inchange semiconductor
apt20m20b2ll.pdf
isc N-Channel MOSFET Transistor APT20M20B2LLFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.02(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
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