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APT20M20LLLG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: APT20M20LLLG

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 568 W

Предельно допустимое напряжение сток-исток (Uds): 200 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Пороговое напряжение включения Ugs(th): 5 V

Максимально допустимый постоянный ток стока (Id): 100 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 110 nC

Время нарастания (tr): 40 ns

Выходная емкость (Cd): 2180 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.02 Ohm

Тип корпуса: TO-264

Аналог (замена) для APT20M20LLLG

 

 

APT20M20LLLG Datasheet (PDF)

1.1. apt20m20b2llg apt20m20lllg.pdf Size:160K _update_mosfet

APT20M20LLLG APT20M20LLLG

APT20M20B2LL APT20M20LLL Ω 200V 100A 0.020Ω Ω Ω Ω R POWER MOS 7 MOSFET T-MAX™ Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along wi

1.2. apt20m20b2fllg apt20m20lfllg.pdf Size:157K _update_mosfet

APT20M20LLLG APT20M20LLLG

APT20M20B2FLL APT20M20LFLL Ω 200V 100A 0.020Ω Ω Ω Ω R FREDFET POWER MOS 7 FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel T-MAX™ TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching loss

 2.1. apt20m20b2ll.pdf Size:69K _apt

APT20M20LLLG APT20M20LLLG

APT20M20B2LL APT20M20LLL 200V 100A 0.020W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX™ TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast

2.2. apt20m20jll.pdf Size:60K _apt

APT20M20LLLG APT20M20LLLG

APT20M20JLL 200V 106A 0.020 W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's

 2.3. apt20m20jfll.pdf Size:62K _apt

APT20M20LLLG APT20M20LLLG

APT20M20JFLL 200V 106A 0.020W TM FREDFET POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent wi

2.4. apt20m20b2fll.pdf Size:71K _apt

APT20M20LLLG APT20M20LLLG

APT20M20B2FLL APT20M20LFLL 200V 100A 0.020W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX™ TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with excepti

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