APT20M38SVFRG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT20M38SVFRG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 370 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 67 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21 nS
Cossⓘ - Capacitancia de salida: 1145 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.038 Ohm
Paquete / Cubierta: D3PAK
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APT20M38SVFRG PDF Specs
apt20m38svfrg.pdf
200V 67A 0.038 APT20M38BVFR APT20M38SVFR APT20M38BVFRG* APT20M38SVFRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. BVFR POWER MOS V FREDFET D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power... See More ⇒
apt20m38svr.pdf
APT20M38SVR 200V 67A 0.038 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement D3PAK mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower ... See More ⇒
apt20m38bvr.pdf
APT20M38BVR 200V 67A 0.038 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower ... See More ⇒
apt20m38bvfr.pdf
APT20M38BVFR 200V 67A 0.038 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes... See More ⇒
Otros transistores... APT20M20LFLLG , APT20M20LLLG , APT20M34BFLLG , APT20M34BLLG , APT20M34SFLLG , APT20M34SLLG , APT20M36BFLLG , APT20M36SFLLG , IRF9540N , APT20M40HVR , APT21M100J , APT22F100J , APT22F120B2 , APT22F120L , APT22F80B , APT22F80S , APT22M100JCU2 .
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