APT20M38SVFRG Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APT20M38SVFRG
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 370 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 67 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 148 nC
trⓘ - Время нарастания: 21 ns
Cossⓘ - Выходная емкость: 1145 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.038 Ohm
Тип корпуса: D3PAK
APT20M38SVFRG Datasheet (PDF)
apt20m38svfrg.pdf

200V 67A 0.038APT20M38BVFR APT20M38SVFRAPT20M38BVFRG* APT20M38SVFRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.BVFRPOWER MOS V FREDFETD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementTO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power
apt20m38svr.pdf

APT20M38SVR200V 67A 0.038POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement D3PAKmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower
apt20m38bvr.pdf

APT20M38BVR200V 67A 0.038POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower
apt20m38bvfr.pdf

APT20M38BVFR200V 67A 0.038POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: MCU09N20 | NCEP030N60AGU | IRFI9520GPBF | 2SK3666-3-TB-E | HGN320N20SL | R6030KNX | LN2306LT1G
History: MCU09N20 | NCEP030N60AGU | IRFI9520GPBF | 2SK3666-3-TB-E | HGN320N20SL | R6030KNX | LN2306LT1G



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