All MOSFET. APT20M38SVFRG Datasheet

 

APT20M38SVFRG MOSFET. Datasheet pdf. Equivalent

Type Designator: APT20M38SVFRG

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 370 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 67 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 148 nC

Rise Time (tr): 21 nS

Drain-Source Capacitance (Cd): 1145 pF

Maximum Drain-Source On-State Resistance (Rds): 0.038 Ohm

Package: D3PAK

APT20M38SVFRG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT20M38SVFRG Datasheet (PDF)

1.1. apt20m38svfrg.pdf Size:155K _update_mosfet

APT20M38SVFRG
APT20M38SVFRG

Ω 200V 67A 0.038Ω Ω Ω Ω APT20M38BVFR APT20M38SVFR APT20M38BVFRG* APT20M38SVFRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. BVFR POWER MOS V® FREDFET D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power

1.2. apt20m38svr.pdf Size:76K _apt

APT20M38SVFRG
APT20M38SVFRG

APT20M38SVR 200V 67A 0.038Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement D3PAK mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower

 2.1. apt20m38bvfr.pdf Size:76K _apt

APT20M38SVFRG
APT20M38SVFRG

APT20M38BVFR 200V 67A 0.038Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche Tes

2.2. apt20m38bvr.pdf Size:73K _apt

APT20M38SVFRG
APT20M38SVFRG

APT20M38BVR 200V 67A 0.038Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower

Datasheet: IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
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