APT20M38SVFRG MOSFET. Datasheet pdf. Equivalent
Type Designator: APT20M38SVFRG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 370 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 67 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 148 nC
Rise Time (tr): 21 nS
Drain-Source Capacitance (Cd): 1145 pF
Maximum Drain-Source On-State Resistance (Rds): 0.038 Ohm
Package: D3PAK
APT20M38SVFRG Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT20M38SVFRG Datasheet (PDF)
1.1. apt20m38svfrg.pdf 
Size:155K _update_mosfet
Ω 200V 67A 0.038Ω Ω Ω Ω APT20M38BVFR APT20M38SVFR APT20M38BVFRG* APT20M38SVFRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. BVFR POWER MOS V® FREDFET D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power
1.2. apt20m38svr.pdf Size:76K _apt
APT20M38SVR 200V 67A 0.038Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement D3PAK mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower
2.1. apt20m38bvfr.pdf Size:76K _apt
APT20M38BVFR 200V 67A 0.038Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche Tes
2.2. apt20m38bvr.pdf Size:73K _apt
APT20M38BVR 200V 67A 0.038Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower
Datasheet: IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .
