APT28F60B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT28F60B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 520 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 30 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Carga de la puerta (Qg): 140 nC
Tiempo de subida (tr): 36 nS
Conductancia de drenaje-sustrato (Cd): 510 pF
Resistencia entre drenaje y fuente RDS(on): 0.22 Ohm
Paquete / Cubierta: TO-247
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APT28F60B Datasheet (PDF)
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APT28GA60BD15 600V High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low APT28GA60BD15gate charge and a greatly reduced ratio of Cres/Cies provide excellent
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