APT28F60B MOSFET. Datasheet pdf. Equivalent
Type Designator: APT28F60B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 520 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 140 nC
trⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 510 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
Package: TO-247
APT28F60B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT28F60B Datasheet (PDF)
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APT28GA60BD15 600V High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low APT28GA60BD15gate charge and a greatly reduced ratio of Cres/Cies provide excellent
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