APT28F60B Specs and Replacement

Type Designator: APT28F60B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 520 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 510 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm

Package: TO-247

APT28F60B substitution

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APT28F60B datasheet

 ..1. Size:213K  microsemi
 apt28f60b apt28f60s.pdf pdf_icon

APT28F60B

APT28F60B APT28F60S 600V, 30A, 0.22 Max, trr 230ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Lo... See More ⇒

 9.1. Size:211K  microsemi
 apt28ga60k.pdf pdf_icon

APT28F60B

APT28GA60K 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved TO-220 through leading technology silicon design and lifetime control processes. A reduced Eoff - APT28GA60K VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excelle... See More ⇒

 9.2. Size:242K  microsemi
 apt28ga60bd15.pdf pdf_icon

APT28F60B

APT28GA60BD15 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low APT28GA60BD15 gate charge and a greatly reduced ratio of Cres/Cies provide excellent... See More ⇒

 9.3. Size:207K  microsemi
 apt28m120b2 apt28m120l.pdf pdf_icon

APT28F60B

APT28M120B2 APT28M120L 1200V, 29A, 0.53 Max N-Channel MOSFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and ... See More ⇒

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Detailed specifications: APT24M120L, APT24M80B, APT24M80S, APT25M100J, APT26F120B2, APT26F120L, APT26M100JCU2, APT26M100JCU3, TK10A60D, APT28F60S, APT28M120B2, APT28M120L, APT29F100B2, APT29F100L, APT29F80J, APT30F50B, APT30F50S

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