APT28F60B MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: APT28F60B
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 520 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 30 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 140 nC
Время нарастания (tr): 36 ns
Выходная емкость (Cd): 510 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.22 Ohm
Тип корпуса: TO-247
APT28F60B Datasheet (PDF)
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apt28ga60k.pdf
APT28GA60K 600V High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved TO-220through leading technology silicon design and lifetime control processes. A reduced Eoff - APT28GA60KVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excelle
apt28ga60bd15.pdf
APT28GA60BD15 600V High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low APT28GA60BD15gate charge and a greatly reduced ratio of Cres/Cies provide excellent
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APT28M120B2 APT28M120L 1200V, 29A, 0.53 MaxN-Channel MOSFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and
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