APT30M60J MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: APT30M60J
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 355 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 31 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 800 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
   Paquete / Cubierta: SOT-227

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APT30M60J Datasheet (PDF)

..1. Size:214K microsemi
apt30m60j.pdf

APT30M60J 600V, 31A, 0.15 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon ga

7.1. Size:69K apt
apt30m61bll.pdf

APT30M61BLLAPT30M61SLL300V 54A 0.061WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switchin

7.2. Size:102K apt
apt30m61bfllg apt30m61sfllg.pdf

APT30M61BFLLAPT30M61SFLL300V 54A 0.061R POWER MOS 7 FREDFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with

7.3. Size:375K inchange semiconductor
apt30m61bll.pdf

isc N-Channel MOSFET Transistor APT30M61BLLFEATURESDrain Current I =54A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.061(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

7.4. Size:375K inchange semiconductor
apt30m61bfll.pdf

isc N-Channel MOSFET Transistor APT30M61BFLLFEATURESDrain Current I = 54A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.061(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

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