APT30M60J. Аналоги и основные параметры

Наименование производителя: APT30M60J

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 355 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 31 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 55 ns

Cossⓘ - Выходная емкость: 800 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.15 Ohm

Тип корпуса: SOT-227

Аналог (замена) для APT30M60J

- подборⓘ MOSFET транзистора по параметрам

 

APT30M60J даташит

 ..1. Size:214K  microsemi
apt30m60j.pdfpdf_icon

APT30M60J

APT30M60J 600V, 31A, 0.15 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of the poly-silicon ga

 7.1. Size:69K  apt
apt30m61bll.pdfpdf_icon

APT30M60J

APT30M61BLL APT30M61SLL 300V 54A 0.061W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switchin

 7.2. Size:102K  apt
apt30m61bfllg apt30m61sfllg.pdfpdf_icon

APT30M60J

APT30M61BFLL APT30M61SFLL 300V 54A 0.061 R POWER MOS 7 FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with

 7.3. Size:375K  inchange semiconductor
apt30m61bll.pdfpdf_icon

APT30M60J

isc N-Channel MOSFET Transistor APT30M61BLL FEATURES Drain Current I =54A@ T =25 D C Drain Source Voltage- V =300V(Min) DSS Static Drain-Source On-Resistance R =0.061 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

Другие IGBT... APT30M30B2FLLG, APT30M30B2LLG, APT30M30JFLL, APT30M30LFLL, APT30M30LLLG, APT30M36JFLL, APT30M40B2VFRG, APT30M40B2VRG, 8N60, APT30M61BFLLG, APT30M61SFLLG, APT30M75BFLLG, APT30M75BLLG, APT30M75SFLLG, APT30M75SLLG, APT30M85SVRG, APT30N60BC6