APT30M60J Specs and Replacement

Type Designator: APT30M60J

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 355 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 31 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 800 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: SOT-227

APT30M60J substitution

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APT30M60J datasheet

 ..1. Size:214K  microsemi
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APT30M60J

APT30M60J 600V, 31A, 0.15 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of the poly-silicon ga... See More ⇒

 7.1. Size:69K  apt
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APT30M60J

APT30M61BLL APT30M61SLL 300V 54A 0.061W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switchin... See More ⇒

 7.2. Size:102K  apt
 apt30m61bfllg apt30m61sfllg.pdf pdf_icon

APT30M60J

APT30M61BFLL APT30M61SFLL 300V 54A 0.061 R POWER MOS 7 FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with... See More ⇒

 7.3. Size:375K  inchange semiconductor
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APT30M60J

isc N-Channel MOSFET Transistor APT30M61BLL FEATURES Drain Current I =54A@ T =25 D C Drain Source Voltage- V =300V(Min) DSS Static Drain-Source On-Resistance R =0.061 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒

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Detailed specifications: APT30M30B2FLLG, APT30M30B2LLG, APT30M30JFLL, APT30M30LFLL, APT30M30LLLG, APT30M36JFLL, APT30M40B2VFRG, APT30M40B2VRG, 8N60, APT30M61BFLLG, APT30M61SFLLG, APT30M75BFLLG, APT30M75BLLG, APT30M75SFLLG, APT30M75SLLG, APT30M85SVRG, APT30N60BC6

Keywords - APT30M60J MOSFET specs

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