APT34M60B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT34M60B

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 624 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 36 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 43 nS

Cossⓘ - Capacitancia de salida: 610 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm

Encapsulados: TO-247

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APT34M60B datasheet

 ..1. Size:212K  microsemi
apt34m60b apt34m60s.pdf pdf_icon

APT34M60B

APT34M60B APT34M60S 600V, 36A, 0.19 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of

 ..2. Size:376K  inchange semiconductor
apt34m60b.pdf pdf_icon

APT34M60B

isc N-Channel MOSFET Transistor APT34M60B FEATURES Drain Current I =36A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.19 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 9.1. Size:173K  apt
apt34n80b2c3.pdf pdf_icon

APT34M60B

APT34N80B2C3 APT34N80LC3 800V 34A 0.145 Super Junction MOSFET T-MAX TO-264 COOLMOS Power Semiconductors Ultra low RDS(ON) D Low Miller Capacitance Ultra Low Gate Charge, Qg G Avalanche Energy Rated S Popular T-MAX or TO-264 Package MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT34N80B2C3_

 9.2. Size:256K  microsemi
apt34n80b2c3g apt34n80lc3g.pdf pdf_icon

APT34M60B

APT34N80B2C3 APT34N80LC3 800V 34A 0.145 Super Junction MOSFET T-MAX TO-264 COOLMOS Power Semiconductors Ultra low RDS(ON) Low Miller Capacitance D Ultra Low Gate Charge, Qg Avalanche Energy Rated G Popular T-MAX or TO-264 Package S Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made

Otros transistores... APT32M80J, APT33N90JCCU2, APT33N90JCCU3, APT34F100B2, APT34F100L, APT34F60B, APT34F60BG, APT34F60S, IRF730, APT34M60S, APT34N80B2C3G, APT34N80LC3G, APT3565BN, APT3580BN, APT36N90BC3G, APT37F50B, APT37F50S