APT34M60B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: APT34M60B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 624 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 36 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 43 nS
   Cossⓘ - Capacitancia de salida: 610 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
   Paquete / Cubierta: TO-247

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APT34M60B Datasheet (PDF)

..1. Size:212K microsemi
apt34m60b apt34m60s.pdf

APT34M60B APT34M60S 600V, 36A, 0.19 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKA proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of

..2. Size:376K inchange semiconductor
apt34m60b.pdf

isc N-Channel MOSFET Transistor APT34M60BFEATURESDrain Current I =36A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.19(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

9.1. Size:173K apt
apt34n80b2c3.pdf

APT34N80B2C3APT34N80LC3800V 34A 0.145Super Junction MOSFETT-MAXTO-264COOLMOSPower Semiconductors Ultra low RDS(ON)D Low Miller Capacitance Ultra Low Gate Charge, QgG Avalanche Energy RatedS Popular T-MAX or TO-264 PackageMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol ParameterAPT34N80B2C3_

9.2. Size:256K microsemi
apt34n80b2c3g apt34n80lc3g.pdf

APT34N80B2C3APT34N80LC3800V 34A 0.145Super Junction MOSFETT-MAXTO-264COOLMOSPower Semiconductors Ultra low RDS(ON) Low Miller CapacitanceD Ultra Low Gate Charge, Qg Avalanche Energy Rated G Popular T-MAX or TO-264 PackageSUnless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made

9.3. Size:213K microsemi
apt34f60b apt34f60bg apt34f60s.pdf

APT34F60B APT34F60S 600V, 36A, 0.19 Max trr 250nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power D3PAKMOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low

9.4. Size:179K microsemi
apt34f100b2 apt34f100l.pdf

APT34F100B2 APT34F100L 1000V, 35A, .38 Max trr 300nsN-Channel FREDFET T-MaxTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt ca

9.5. Size:375K inchange semiconductor
apt34f60b.pdf

isc N-Channel MOSFET Transistor APT34F60BFEATURESDrain Current I = 34A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.21(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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