APT34M60B Datasheet. Specs and Replacement

Type Designator: APT34M60B  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 624 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 36 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 43 nS

Cossⓘ - Output Capacitance: 610 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: TO-247

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APT34M60B datasheet

 ..1. Size:212K  microsemi
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APT34M60B

APT34M60B APT34M60S 600V, 36A, 0.19 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of ... See More ⇒

 ..2. Size:376K  inchange semiconductor
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APT34M60B

isc N-Channel MOSFET Transistor APT34M60B FEATURES Drain Current I =36A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.19 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒

 9.1. Size:173K  apt
apt34n80b2c3.pdf pdf_icon

APT34M60B

APT34N80B2C3 APT34N80LC3 800V 34A 0.145 Super Junction MOSFET T-MAX TO-264 COOLMOS Power Semiconductors Ultra low RDS(ON) D Low Miller Capacitance Ultra Low Gate Charge, Qg G Avalanche Energy Rated S Popular T-MAX or TO-264 Package MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT34N80B2C3_... See More ⇒

 9.2. Size:256K  microsemi
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APT34M60B

APT34N80B2C3 APT34N80LC3 800V 34A 0.145 Super Junction MOSFET T-MAX TO-264 COOLMOS Power Semiconductors Ultra low RDS(ON) Low Miller Capacitance D Ultra Low Gate Charge, Qg Avalanche Energy Rated G Popular T-MAX or TO-264 Package S Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made ... See More ⇒

Detailed specifications: APT32M80J, APT33N90JCCU2, APT33N90JCCU3, APT34F100B2, APT34F100L, APT34F60B, APT34F60BG, APT34F60S, AOD4184A, APT34M60S, APT34N80B2C3G, APT34N80LC3G, APT3565BN, APT3580BN, APT36N90BC3G, APT37F50B, APT37F50S

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