Справочник MOSFET. APT34M60B

 

APT34M60B MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APT34M60B
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 624 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 36 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 165 nC
   trⓘ - Время нарастания: 43 ns
   Cossⓘ - Выходная емкость: 610 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.19 Ohm
   Тип корпуса: TO-247

 Аналог (замена) для APT34M60B

 

 

APT34M60B Datasheet (PDF)

 ..1. Size:212K  microsemi
apt34m60b apt34m60s.pdf

APT34M60B
APT34M60B

APT34M60B APT34M60S 600V, 36A, 0.19 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKA proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of

 ..2. Size:376K  inchange semiconductor
apt34m60b.pdf

APT34M60B
APT34M60B

isc N-Channel MOSFET Transistor APT34M60BFEATURESDrain Current I =36A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.19(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 9.1. Size:173K  apt
apt34n80b2c3.pdf

APT34M60B
APT34M60B

APT34N80B2C3APT34N80LC3800V 34A 0.145Super Junction MOSFETT-MAXTO-264COOLMOSPower Semiconductors Ultra low RDS(ON)D Low Miller Capacitance Ultra Low Gate Charge, QgG Avalanche Energy RatedS Popular T-MAX or TO-264 PackageMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol ParameterAPT34N80B2C3_

 9.2. Size:256K  microsemi
apt34n80b2c3g apt34n80lc3g.pdf

APT34M60B
APT34M60B

APT34N80B2C3APT34N80LC3800V 34A 0.145Super Junction MOSFETT-MAXTO-264COOLMOSPower Semiconductors Ultra low RDS(ON) Low Miller CapacitanceD Ultra Low Gate Charge, Qg Avalanche Energy Rated G Popular T-MAX or TO-264 PackageSUnless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made

 9.3. Size:213K  microsemi
apt34f60b apt34f60bg apt34f60s.pdf

APT34M60B
APT34M60B

APT34F60B APT34F60S 600V, 36A, 0.19 Max trr 250nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power D3PAKMOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low

 9.4. Size:179K  microsemi
apt34f100b2 apt34f100l.pdf

APT34M60B
APT34M60B

APT34F100B2 APT34F100L 1000V, 35A, .38 Max trr 300nsN-Channel FREDFET T-MaxTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt ca

 9.5. Size:375K  inchange semiconductor
apt34f60b.pdf

APT34M60B
APT34M60B

isc N-Channel MOSFET Transistor APT34F60BFEATURESDrain Current I = 34A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.21(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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