RF1S530SM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RF1S530SM

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 79 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Id|ⓘ - Corriente continua de drenaje: 14 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm

Encapsulados: TO263AB

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RF1S530SM datasheet

 ..1. Size:74K  intersil
 irf530 rf1s530sm.pdf pdf_icon

RF1S530SM

IRF530, RF1S530SM Data Sheet November 1999 File Number 1575.6 14A, 100V, 0.160 Ohm, N-Channel Power Features MOSFETs 14A, 100V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.160 power field effect transistors. They are advanced power Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in th

 9.1. Size:373K  fairchild semi
 rfg50n06 rfp50n06 rf1s50n06sm.pdf pdf_icon

RF1S530SM

RFG50N06, RFP50N06, RF1S50N06SM Data Sheet January 2002 50A, 60V, 0.022 Ohm, N-Channel Power Features MOSFETs 50A, 60V These N-Channel power MOSFETs are manufactured using rDS(ON) = 0.022 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits gives optimum utilization of silico

 9.2. Size:112K  fairchild semi
 irf540 rf1s540sm.pdf pdf_icon

RF1S530SM

IRF540, RF1S540SM Data Sheet January 2002 28A, 100V, 0.077 Ohm, N-Channel Power Features MOSFETs 28A, 100V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.077 power field effect transistors. They are advanced power Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avala

 9.3. Size:52K  harris semi
 rf1s540.pdf pdf_icon

RF1S530SM

IRF540, IRF541, IRF542, Semiconductor IRF543, RF1S540, RF1S540SM 25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs November 1997 Features Description 25A and 28A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power rDS(ON) = 0.077 and 0.100 MOSFETs designed, tested, and guaranteed to

MOSTRAR MÁS

Otros transistores... RF1S30P06SM, RF1S40N10LESM, RF1S40N10SM, RF1S45N06LESM, RF1S45N06SM, RF1S4N100SM, RF1S50N06LESM, RF1S50N06SM, IRF520, RF1S540SM, RF1S60P03SM, RF1S630SM, RF1S640SM, RF1S70N03SM, RF1S70N06SM, RF1S9530SM, RF1S9540SM