All MOSFET. RF1S530SM Datasheet

 

RF1S530SM MOSFET. Datasheet pdf. Equivalent


   Type Designator: RF1S530SM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 14 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: TO263AB

 RF1S530SM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RF1S530SM Datasheet (PDF)

 ..1. Size:74K  intersil
irf530 rf1s530sm.pdf

RF1S530SM
RF1S530SM

IRF530, RF1S530SMData Sheet November 1999 File Number 1575.614A, 100V, 0.160 Ohm, N-Channel Power FeaturesMOSFETs 14A, 100VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.160power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand aspecified level of energy in th

 9.1. Size:373K  fairchild semi
rfg50n06 rfp50n06 rf1s50n06sm.pdf

RF1S530SM
RF1S530SM

RFG50N06, RFP50N06, RF1S50N06SMData Sheet January 200250A, 60V, 0.022 Ohm, N-Channel Power FeaturesMOSFETs 50A, 60VThese N-Channel power MOSFETs are manufactured using rDS(ON) = 0.022 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits gives optimum utilization of silico

 9.2. Size:112K  fairchild semi
irf540 rf1s540sm.pdf

RF1S530SM
RF1S530SM

IRF540, RF1S540SMData Sheet January 200228A, 100V, 0.077 Ohm, N-Channel Power FeaturesMOSFETs 28A, 100VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.077power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avala

 9.3. Size:52K  harris semi
rf1s540.pdf

RF1S530SM
RF1S530SM

IRF540, IRF541, IRF542,SemiconductorIRF543, RF1S540, RF1S540SM25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm,N-Channel Power MOSFETsNovember 1997Features Description 25A and 28A, 80V and 100V These are N-Channel enhancement mode silicon gatepower field effect transistors. They are advanced power rDS(ON) = 0.077 and 0.100MOSFETs designed, tested, and guaranteed to

 9.4. Size:154K  intersil
rfg50n06le rfp50n06le rf1s50n06lesm.pdf

RF1S530SM
RF1S530SM

RFG50N06LE, RFP50N06LE, RF1S50N06LESMData Sheet October 1999 File Number 4072.350A, 60V, 0.022 Ohm, Logic Level FeaturesN-Channel Power MOSFETs 50A, 60VThese N-Channel enhancement mode power MOSFETs are rDS(ON) = 0.022manufactured using the latest manufacturing process Temperature Compensating PSPICE Modeltechnology. This process, which uses feature sizesapproa

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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