RF1S530SM MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: RF1S530SM
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 79 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 14 A
Максимальная температура канала (Tj): 150 °C
Сопротивление сток-исток открытого транзистора (Rds): 0.16 Ohm
Тип корпуса: TO263AB
RF1S530SM Datasheet (PDF)
irf530 rf1s530sm.pdf
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IRF530, RF1S530SMData Sheet November 1999 File Number 1575.614A, 100V, 0.160 Ohm, N-Channel Power FeaturesMOSFETs 14A, 100VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.160power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand aspecified level of energy in th
rfg50n06 rfp50n06 rf1s50n06sm.pdf
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RFG50N06, RFP50N06, RF1S50N06SMData Sheet January 200250A, 60V, 0.022 Ohm, N-Channel Power FeaturesMOSFETs 50A, 60VThese N-Channel power MOSFETs are manufactured using rDS(ON) = 0.022 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits gives optimum utilization of silico
irf540 rf1s540sm.pdf
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IRF540, RF1S540SMData Sheet January 200228A, 100V, 0.077 Ohm, N-Channel Power FeaturesMOSFETs 28A, 100VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.077power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avala
rf1s540.pdf
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IRF540, IRF541, IRF542,SemiconductorIRF543, RF1S540, RF1S540SM25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm,N-Channel Power MOSFETsNovember 1997Features Description 25A and 28A, 80V and 100V These are N-Channel enhancement mode silicon gatepower field effect transistors. They are advanced power rDS(ON) = 0.077 and 0.100MOSFETs designed, tested, and guaranteed to
rfg50n06le rfp50n06le rf1s50n06lesm.pdf
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RFG50N06LE, RFP50N06LE, RF1S50N06LESMData Sheet October 1999 File Number 4072.350A, 60V, 0.022 Ohm, Logic Level FeaturesN-Channel Power MOSFETs 50A, 60VThese N-Channel enhancement mode power MOSFETs are rDS(ON) = 0.022manufactured using the latest manufacturing process Temperature Compensating PSPICE Modeltechnology. This process, which uses feature sizesapproa
Другие MOSFET... RF1S30P06SM , RF1S40N10LESM , RF1S40N10SM , RF1S45N06LESM , RF1S45N06SM , RF1S4N100SM , RF1S50N06LESM , RF1S50N06SM , AO3400 , RF1S540SM , RF1S60P03SM , RF1S630SM , RF1S640SM , RF1S70N03SM , RF1S70N06SM , RF1S9530SM , RF1S9540SM .