RF1S60P03SM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RF1S60P03SM
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 176 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Corriente continua de drenaje |Id|: 60 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Resistencia entre drenaje y fuente RDS(on): 0.027 Ohm
Paquete / Cubierta: TO263AB
Búsqueda de reemplazo de MOSFET RF1S60P03SM
RF1S60P03SM Datasheet (PDF)
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Otros transistores... RF1S40N10SM , RF1S45N06LESM , RF1S45N06SM , RF1S4N100SM , RF1S50N06LESM , RF1S50N06SM , RF1S530SM , RF1S540SM , IRFB31N20D , RF1S630SM , RF1S640SM , RF1S70N03SM , RF1S70N06SM , RF1S9530SM , RF1S9540SM , RF1S9630SM , RF1S9640SM .
