RF1S60P03SM Specs and Replacement
Type Designator: RF1S60P03SM
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 176 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
Package: TO263AB
RF1S60P03SM substitution
- MOSFET ⓘ Cross-Reference Search
RF1S60P03SM datasheet
rf1s60p03.pdf
RFG60P03, RFP60P03, S E M I C O N D U C T O R RF1S60P03, RF1S60P03SM 60A, 30V, Avalanche Rated, P-Channel December 1995 Enhancement-Mode Power MOSFETs Features Packages JEDEC STYLE TO-247 60A, 30V SOURCE rDS(ON) = 0.027 DRAIN Temperature Compensating PSPICE Model GATE DRAIN Peak Current vs Pulse Width Curve (BOTTOM SIDE METAL) UIS Rating Curve +175oC... See More ⇒
irf630 rf1s630sm.pdf
IRF630, RF1S630SM Data Sheet January 2002 9A, 200V, 0.400 Ohm, N-Channel Power Features MOSFETs 9A, 200V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.400 power field effect transistors. They are advanced power Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanc... See More ⇒
irf640 rf1s640 rf1s640sm.pdf
IRF640, RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power Features MOSFETs 18A, 200V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.180 power field effect transistors. They are advanced power Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakd... See More ⇒
Detailed specifications: RF1S40N10SM, RF1S45N06LESM, RF1S45N06SM, RF1S4N100SM, RF1S50N06LESM, RF1S50N06SM, RF1S530SM, RF1S540SM, STF13NM60N, RF1S630SM, RF1S640SM, RF1S70N03SM, RF1S70N06SM, RF1S9530SM, RF1S9540SM, RF1S9630SM, RF1S9640SM
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