RF1S60P03SM. Аналоги и основные параметры

Наименование производителя: RF1S60P03SM

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 176 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 60 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.027 Ohm

Тип корпуса: TO263AB

Аналог (замена) для RF1S60P03SM

- подборⓘ MOSFET транзистора по параметрам

 

RF1S60P03SM даташит

 5.1. Size:66K  harris semi
 rf1s60p03.pdf pdf_icon

RF1S60P03SM

RFG60P03, RFP60P03, S E M I C O N D U C T O R RF1S60P03, RF1S60P03SM 60A, 30V, Avalanche Rated, P-Channel December 1995 Enhancement-Mode Power MOSFETs Features Packages JEDEC STYLE TO-247 60A, 30V SOURCE rDS(ON) = 0.027 DRAIN Temperature Compensating PSPICE Model GATE DRAIN Peak Current vs Pulse Width Curve (BOTTOM SIDE METAL) UIS Rating Curve +175oC

 5.2. Size:103K  harris semi
 rfg60p03 rfp60p03 rf1s60p03-sm.pdf pdf_icon

RF1S60P03SM

 9.1. Size:129K  fairchild semi
 irf630 rf1s630sm.pdf pdf_icon

RF1S60P03SM

IRF630, RF1S630SM Data Sheet January 2002 9A, 200V, 0.400 Ohm, N-Channel Power Features MOSFETs 9A, 200V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.400 power field effect transistors. They are advanced power Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanc

 9.2. Size:128K  fairchild semi
 irf640 rf1s640 rf1s640sm.pdf pdf_icon

RF1S60P03SM

IRF640, RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power Features MOSFETs 18A, 200V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.180 power field effect transistors. They are advanced power Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakd

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