APT5014B2VFRG MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

APT5014B2VFRG datasheet

..1. Size:114K apt
apt5014b2vfrg apt5014lvfrg.pdf pdf_icon

APT5014B2VFR APT5014LVFR 500V 37A 0.140 B2VFR POWER MOS V FREDFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.

4.1. Size:55K apt
apt5014b2vrg.pdf pdf_icon

APT5014B2VR 500V 37A 0.140 POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lo

4.2. Size:62K apt
apt5014b2vr.pdf pdf_icon

5.1. Size:33K apt
apt5014b2lc.pdf pdf_icon

APT5014B2LC APT5014LLC 500V 37A 0.140W B2LC TM POWER MOS VI T-MAX Power MOS VITM is a new generation of low gate charge, high voltage TO-264 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, LLC delivers exceptionally fast

Otros transistores... APT4F120K , APT4F120S , APT4M120K , APT5010B2FLLG , APT5010B2LLG , APT5010LFLLG , APT5010LLLG , APT5012JN , 10N65 , APT5014B2VRG , APT5014BFLLG , APT5014BLLG , APT5014LVFRG , APT5014SFLLG , APT5014SLLG , APT5015BVFRG , 2SK1982-01MR .