All MOSFET. APT5014B2VFRG Datasheet

 

APT5014B2VFRG Datasheet and Replacement


   Type Designator: APT5014B2VFRG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 450 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 37 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 737 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: TO-247
 

 APT5014B2VFRG substitution

   - MOSFET ⓘ Cross-Reference Search

 

APT5014B2VFRG Datasheet (PDF)

 ..1. Size:114K  apt
 apt5014b2vfrg apt5014lvfrg.pdf pdf_icon

APT5014B2VFRG

APT5014B2VFRAPT5014LVFR500V 37A 0.140B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

 4.1. Size:55K  apt
 apt5014b2vrg.pdf pdf_icon

APT5014B2VFRG

APT5014B2VR500V 37A 0.140POWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lo

 4.2. Size:62K  apt
 apt5014b2vr.pdf pdf_icon

APT5014B2VFRG

APT5014B2VR500V 37A 0.140POWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lo

 5.1. Size:33K  apt
 apt5014b2lc.pdf pdf_icon

APT5014B2VFRG

APT5014B2LCAPT5014LLC500V 37A 0.140WB2LCTMPOWER MOS VIT-MAXPower MOS VITM is a new generation of low gate charge, high voltageTO-264N-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and Crss.Lower gate charge coupled with Power MOS VITM optimized gate layout,LLCdelivers exceptionally fast

SHOW MORE

Datasheet: APT4F120K , APT4F120S , APT4M120K , APT5010B2FLLG , APT5010B2LLG , APT5010LFLLG , APT5010LLLG , APT5012JN , STP80NF70 , APT5014B2VRG , APT5014BFLLG , APT5014BLLG , APT5014LVFRG , APT5014SFLLG , APT5014SLLG , APT5015BVFRG , 2SK1982-01MR .

History: DMP3036SFG | NVMFS5C410N | DHB16N06 | AP60SL650AFI | BLP04N10-P | SIHF640S | SM140R50CT1TL

Keywords - APT5014B2VFRG MOSFET datasheet

 APT5014B2VFRG cross reference
 APT5014B2VFRG equivalent finder
 APT5014B2VFRG lookup
 APT5014B2VFRG substitution
 APT5014B2VFRG replacement

 

 
Back to Top

 


 
.