RF1S9530SM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RF1S9530SM
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 75 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
Encapsulados: TO263AB
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RF1S9530SM datasheet
irf9530 rf1s9530sm.pdf
IRF9530, RF1S9530SM Data Sheet July 1999 File Number 2221.4 12A, 100V, 0.300 Ohm, P-Channel Power Features MOSFETs 12A, 100V These are P-Channel enhancement mode silicon gate rDS(ON) = 0.300 power field effect transistors. They are advanced power Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the
irf9540 rf1s9540sm.pdf
IRF9540, RF1S9540SM Data Sheet January 2002 19A, 100V, 0.200 Ohm, P-Channel Power Features MOSFETs 19A, 100V These are P-Channel enhancement mode silicon gate power rDS(ON) = 0.200 field effect transistors. They are advanced power MOSFETs Single Pulse Avalanche Energy Rated designed, tested, and guaranteed to withstand a specified level of energy in the breakdown ava
irf9630 rf1s9630sm.pdf
IRF9630, RF1S9630SM Data Sheet January 2002 6.5A, 200V, 0.800 Ohm, P-Channel Power Features MOSFETs 6.5A, 200V These are P-Channel enhancement mode silicon gate power rDS(ON) = 0.800 field effect transistors. They are advanced power MOSFETs Single Pulse Avalanche Energy Rated designed, tested, and guaranteed to withstand a specified level of energy in the breakdown a
Otros transistores... RF1S50N06SM, RF1S530SM, RF1S540SM, RF1S60P03SM, RF1S630SM, RF1S640SM, RF1S70N03SM, RF1S70N06SM, 75N75, RF1S9540SM, RF1S9630SM, RF1S9640SM, RFB18N10CS, RFD10P03L, RFD10P03LSM, RFD12N06RLE, RFD12N06RLESM
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