Справочник MOSFET. RF1S9530SM

 

RF1S9530SM MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RF1S9530SM
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 75 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.3 Ohm
   Тип корпуса: TO263AB

 Аналог (замена) для RF1S9530SM

 

 

RF1S9530SM Datasheet (PDF)

 ..1. Size:68K  intersil
 irf9530 rf1s9530sm.pdf

RF1S9530SM RF1S9530SM

IRF9530, RF1S9530SMData Sheet July 1999 File Number 2221.412A, 100V, 0.300 Ohm, P-Channel Power FeaturesMOSFETs 12A, 100VThese are P-Channel enhancement mode silicon gate rDS(ON) = 0.300power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand aspecified level of energy in the

 8.1. Size:99K  fairchild semi
 irf9540 rf1s9540sm.pdf

RF1S9530SM RF1S9530SM

IRF9540, RF1S9540SMData Sheet January 200219A, 100V, 0.200 Ohm, P-Channel Power FeaturesMOSFETs 19A, 100VThese are P-Channel enhancement mode silicon gate power rDS(ON) = 0.200field effect transistors. They are advanced power MOSFETs Single Pulse Avalanche Energy Rateddesigned, tested, and guaranteed to withstand a specified level of energy in the breakdown ava

 8.2. Size:414K  harris semi
 rf1s9540.pdf

RF1S9530SM RF1S9530SM

 9.1. Size:103K  fairchild semi
 irf9630 rf1s9630sm.pdf

RF1S9530SM RF1S9530SM

IRF9630, RF1S9630SMData Sheet January 20026.5A, 200V, 0.800 Ohm, P-Channel Power FeaturesMOSFETs 6.5A, 200VThese are P-Channel enhancement mode silicon gate power rDS(ON) = 0.800field effect transistors. They are advanced power MOSFETs Single Pulse Avalanche Energy Rateddesigned, tested, and guaranteed to withstand a specified level of energy in the breakdown a

 9.2. Size:103K  fairchild semi
 irf9640 rf1s9640sm.pdf

RF1S9530SM RF1S9530SM

IRF9640, RF1S9640SMData Sheet January 200211A, 200V, 0.500 Ohm, P-Channel Power FeaturesMOSFETs 11A, 200VThese are P-Channel enhancement mode silicon-gate rDS(ON) = 0.500power field-effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown ava

 9.3. Size:406K  harris semi
 irf9630 irf9631 irf9632 irf9633 rf1s9630.pdf

RF1S9530SM RF1S9530SM

Другие MOSFET... RF1S50N06SM , RF1S530SM , RF1S540SM , RF1S60P03SM , RF1S630SM , RF1S640SM , RF1S70N03SM , RF1S70N06SM , IRFZ48N , RF1S9540SM , RF1S9630SM , RF1S9640SM , RFB18N10CS , RFD10P03L , RFD10P03LSM , RFD12N06RLE , RFD12N06RLESM .

 

 
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