APT5024SFLL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT5024SFLL
Tipo de FET: MOFETS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 265 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 22 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6 nS
Cossⓘ - Capacitancia de salida: 417 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.24 Ohm
Encapsulados: D3PAK
Búsqueda de reemplazo de APT5024SFLL MOSFET
- Selecciónⓘ de transistores por parámetros
APT5024SFLL datasheet
apt5024sfll apt5024sfllg.pdf
APT5024BFLL APT5024SFLL 500V 22A 0.240 BFLL R POWER MOS 7 FREDFET (B) Power MOS 7 is a new generation of low loss, high voltage, N-Channel D3PAK enhancement mode power MOSFETS. Both conduction and switch- (S) ing losses are addressed with Power MOS 7 by significantly lowering C G E RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along wi
apt5024bll apt5024sll.pdf
APT5024BLL APT5024SLL 500V 22A 0.240 R BLL POWER MOS 7 MOSFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses SLL along
apt5024svr.pdf
APT5024SVR 500V 22A 0.240 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement D3PAK mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower Leak
apt5024svfrg.pdf
APT5024BVFR APT5024SVFR 500V 22A 0.240 BVFR FREDFET POWER MOS V D3PAK TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V SVFR also achieves faster switching speeds through optimized gate layout.
Otros transistores... APT5016SFLLG , APT5017SVFRG , APT5018BFLLG , APT5018SFLLG , APT5018SLL , APT5022BN , APT5024BLL , APT5024BLLG , IRFB7545 , APT5024SFLLG , APT5024SLL , APT5024SVFRG , APT5025AN , APT5030AN , APT5030BN , APT5040KFLLG , APT50M50JLL .
History: IRF7205PBF-1 | AP0704GMT | XP161A1265PR-G | G18N20K | AOW10N60 | SMNY2Z30 | 2SK2551
History: IRF7205PBF-1 | AP0704GMT | XP161A1265PR-G | G18N20K | AOW10N60 | SMNY2Z30 | 2SK2551
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