APT5024SFLL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT5024SFLL
Tipo de FET: MOFETS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 265 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 22 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6 nS
Cossⓘ - Capacitancia de salida: 417 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.24 Ohm
Paquete / Cubierta: D3PAK
Búsqueda de reemplazo de APT5024SFLL MOSFET
APT5024SFLL Datasheet (PDF)
apt5024sfll apt5024sfllg.pdf

APT5024BFLL APT5024SFLL 500V 22A 0.240BFLLR POWER MOS 7 FREDFET (B)Power MOS 7 is a new generation of low loss, high voltage, N-ChannelD3PAKenhancement mode power MOSFETS. Both conduction and switch-(S)ing losses are addressed with Power MOS 7 by significantly lowering CG ERDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along wi
apt5024bll apt5024sll.pdf

APT5024BLLAPT5024SLL500V 22A 0.240RBLL POWER MOS 7 MOSFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesSLLalong
apt5024svr.pdf

APT5024SVR500V 22A 0.240POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementD3PAKmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche TestedD Lower Leak
apt5024svfrg.pdf

APT5024BVFRAPT5024SVFR500V 22A 0.240BVFRFREDFETPOWER MOS VD3PAKTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS VSVFRalso achieves faster switching speeds through optimized gate layout.
Otros transistores... APT5016SFLLG , APT5017SVFRG , APT5018BFLLG , APT5018SFLLG , APT5018SLL , APT5022BN , APT5024BLL , APT5024BLLG , IRF520 , APT5024SFLLG , APT5024SLL , APT5024SVFRG , APT5025AN , APT5030AN , APT5030BN , APT5040KFLLG , APT50M50JLL .
History: TP0101TS-T1 | BRFL8N65
History: TP0101TS-T1 | BRFL8N65



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