APT5024SFLL Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APT5024SFLL
Тип транзистора: MOFETS
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 265 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 22 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 6 ns
Cossⓘ - Выходная емкость: 417 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.24 Ohm
Тип корпуса: D3PAK
- подбор MOSFET транзистора по параметрам
APT5024SFLL Datasheet (PDF)
apt5024sfll apt5024sfllg.pdf

APT5024BFLL APT5024SFLL 500V 22A 0.240BFLLR POWER MOS 7 FREDFET (B)Power MOS 7 is a new generation of low loss, high voltage, N-ChannelD3PAKenhancement mode power MOSFETS. Both conduction and switch-(S)ing losses are addressed with Power MOS 7 by significantly lowering CG ERDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along wi
apt5024bll apt5024sll.pdf

APT5024BLLAPT5024SLL500V 22A 0.240RBLL POWER MOS 7 MOSFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesSLLalong
apt5024svr.pdf

APT5024SVR500V 22A 0.240POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementD3PAKmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche TestedD Lower Leak
apt5024svfrg.pdf

APT5024BVFRAPT5024SVFR500V 22A 0.240BVFRFREDFETPOWER MOS VD3PAKTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS VSVFRalso achieves faster switching speeds through optimized gate layout.
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: TMU16N25Z | AP2306CGN-HF | PSMN3R7-100BSE | 2SK1591 | IRL40B215 | NCE80T320D | SFG15N10DF
History: TMU16N25Z | AP2306CGN-HF | PSMN3R7-100BSE | 2SK1591 | IRL40B215 | NCE80T320D | SFG15N10DF



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