APT56M50L Todos los transistores

 ..1. Size:187K  microsemi
 apt56m50b2 apt56m50l.pdf

APT56M50B2 APT56M50L 500V, 56A, 0.10 Max N-Channel MOSFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manu- facturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and cap

 ..2. Size:255K  inchange semiconductor
 apt56m50l.pdf

isc N-Channel MOSFET Transistor APT56M50L FEATURES Drain Current I = 56A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.1 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 6.1. Size:301K  inchange semiconductor
 apt56m50b2.pdf

isc N-Channel MOSFET Transistor APT56M50B2 FEATURES Drain Current I = 56A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.1 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 8.1. Size:219K  microsemi
 apt56m60b2 apt56m60l.pdf

APT56M60B2 APT56M60L 600V, 60A, 0.11 Max N-Channel MOSFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and cap

 8.2. Size:255K  inchange semiconductor
 apt56m60l.pdf

isc N-Channel MOSFET Transistor APT56M60L FEATURES Drain Current I = 56A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.13 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 8.3. Size:375K  inchange semiconductor
 apt56m60b2.pdf

isc N-Channel MOSFET Transistor APT56M60B2 FEATURES Drain Current I = 56A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.13 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp