APT56M50L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT56M50L
Tipo de FET: MOFETS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 780 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 56 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 45 nS
Cossⓘ - Capacitancia de salida: 945 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
Paquete / Cubierta: TO-264
Búsqueda de reemplazo de APT56M50L MOSFET
APT56M50L Datasheet (PDF)
apt56m50b2 apt56m50l.pdf

APT56M50B2 APT56M50L 500V, 56A, 0.10 MaxN-Channel MOSFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manu-facturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and cap
apt56m50l.pdf

isc N-Channel MOSFET Transistor APT56M50LFEATURESDrain Current I = 56A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
apt56m50b2.pdf

isc N-Channel MOSFET Transistor APT56M50B2FEATURESDrain Current I = 56A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
apt56m60b2 apt56m60l.pdf

APT56M60B2 APT56M60L 600V, 60A, 0.11 MaxN-Channel MOSFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and cap
Otros transistores... APT53N60BC6 , APT53N60SC6 , APT5570AN , APT56F50B2 , APT56F50L , APT56F60B2 , APT56F60L , APT56M50B2 , 2N7000 , APT56M60B2 , APT56M60L , APT58F50J , APT58M50J , APT58M50JCU2 , APT58M50JCU3 , APT58M80J , APT5F100K .
History: P0806AT | MDU1513URH | CJQ4828
History: P0806AT | MDU1513URH | CJQ4828



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