APT56M50L
MOSFET. Datasheet pdf. Equivalent
Type Designator: APT56M50L
Type of Transistor: MOFETS
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 780
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 56
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 220
nC
trⓘ - Rise Time: 45
nS
Cossⓘ -
Output Capacitance: 945
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1
Ohm
Package:
TO-264
APT56M50L
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT56M50L
Datasheet (PDF)
..1. Size:187K microsemi
apt56m50b2 apt56m50l.pdf 
APT56M50B2 APT56M50L 500V, 56A, 0.10 MaxN-Channel MOSFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manu-facturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and cap
..2. Size:255K inchange semiconductor
apt56m50l.pdf
isc N-Channel MOSFET Transistor APT56M50LFEATURESDrain Current I = 56A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
6.1. Size:301K inchange semiconductor
apt56m50b2.pdf
isc N-Channel MOSFET Transistor APT56M50B2FEATURESDrain Current I = 56A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
8.1. Size:219K microsemi
apt56m60b2 apt56m60l.pdf
APT56M60B2 APT56M60L 600V, 60A, 0.11 MaxN-Channel MOSFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and cap
8.2. Size:255K inchange semiconductor
apt56m60l.pdf
isc N-Channel MOSFET Transistor APT56M60LFEATURESDrain Current I = 56A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.13(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
8.3. Size:375K inchange semiconductor
apt56m60b2.pdf
isc N-Channel MOSFET Transistor APT56M60B2FEATURESDrain Current I = 56A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.13(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
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