All MOSFET. APT56M50L Datasheet

 

APT56M50L Datasheet and Replacement


   Type Designator: APT56M50L
   Type of Transistor: MOFETS
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 780 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 56 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 945 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO-264
 

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APT56M50L Datasheet (PDF)

 ..1. Size:187K  microsemi
apt56m50b2 apt56m50l.pdf pdf_icon

APT56M50L

APT56M50B2 APT56M50L 500V, 56A, 0.10 MaxN-Channel MOSFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manu-facturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and cap

 ..2. Size:255K  inchange semiconductor
apt56m50l.pdf pdf_icon

APT56M50L

isc N-Channel MOSFET Transistor APT56M50LFEATURESDrain Current I = 56A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 6.1. Size:301K  inchange semiconductor
apt56m50b2.pdf pdf_icon

APT56M50L

isc N-Channel MOSFET Transistor APT56M50B2FEATURESDrain Current I = 56A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 8.1. Size:219K  microsemi
apt56m60b2 apt56m60l.pdf pdf_icon

APT56M50L

APT56M60B2 APT56M60L 600V, 60A, 0.11 MaxN-Channel MOSFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and cap

Datasheet: APT53N60BC6 , APT53N60SC6 , APT5570AN , APT56F50B2 , APT56F50L , APT56F60B2 , APT56F60L , APT56M50B2 , 2N7000 , APT56M60B2 , APT56M60L , APT58F50J , APT58M50J , APT58M50JCU2 , APT58M50JCU3 , APT58M80J , APT5F100K .

History: IRF7739L1 | DMP3020LSS

Keywords - APT56M50L MOSFET datasheet

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