APT56M50L datasheet, аналоги, основные параметры

Наименование производителя: APT56M50L  📄📄 

Тип транзистора: MOFETS

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 780 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 56 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 45 ns

Cossⓘ - Выходная емкость: 945 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm

Тип корпуса: TO-264

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Аналог (замена) для APT56M50L

- подборⓘ MOSFET транзистора по параметрам

 

APT56M50L даташит

 ..1. Size:187K  microsemi
 apt56m50b2 apt56m50l.pdf pdf_icon

APT56M50L

APT56M50B2 APT56M50L 500V, 56A, 0.10 Max N-Channel MOSFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manu- facturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and cap

 ..2. Size:255K  inchange semiconductor
 apt56m50l.pdf pdf_icon

APT56M50L

isc N-Channel MOSFET Transistor APT56M50L FEATURES Drain Current I = 56A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.1 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 6.1. Size:301K  inchange semiconductor
 apt56m50b2.pdf pdf_icon

APT56M50L

isc N-Channel MOSFET Transistor APT56M50B2 FEATURES Drain Current I = 56A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.1 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 8.1. Size:219K  microsemi
 apt56m60b2 apt56m60l.pdf pdf_icon

APT56M50L

APT56M60B2 APT56M60L 600V, 60A, 0.11 Max N-Channel MOSFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and cap

ПОКАЗАТЬ ЕЩЁ

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