APT6013B2FLLG Todos los transistores

 

APT6013B2FLLG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT6013B2FLLG
   Tipo de FET: MOFETS
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 565 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 43 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 1060 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
   Paquete / Cubierta: TO-247
 

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APT6013B2FLLG PDF Specs

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APT6013B2FLLG

APT6013B2FLL APT6013LFLL 600V 43A 0.130 B2FLL R POWER MOS 7 FREDFET T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses L... See More ⇒

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APT6013B2FLLG

APT6013B2FLL APT6013LFLL 600V 43A 0.130W TM FREDFET POWER MOS 7 B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching T-MAX TO-264 losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptiona... See More ⇒

 2.2. Size:376K  inchange semiconductor
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APT6013B2FLLG

isc N-Channel MOSFET Transistor APT6013B2FLL FEATURES Drain Current I = 43A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.13 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu... See More ⇒

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APT6013B2FLLG

APT6013B2LL APT6013LLL 600V 43A 0.130W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast swi... See More ⇒

Otros transistores... APT58M80J , APT5F100K , APT6010B2FLLG , APT6010B2LLG , APT6010LFLLG , APT6010LLLG , APT6011B2VFRG , APT6011LVFRG , AON7410 , APT6013B2LLG , APT6013LFLLG , APT6013LLLG , APT6015B2VFRG , APT6015JVFR , APT6015LVFRG , APT6017B2FLLG , APT6017B2LLG .

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