APT6013B2FLLG Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APT6013B2FLLG
Тип транзистора: MOFETS
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 565 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 43 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 14 ns
Cossⓘ - Выходная емкость: 1060 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.13 Ohm
Тип корпуса: TO-247
Аналог (замена) для APT6013B2FLLG
APT6013B2FLLG Datasheet (PDF)
apt6013b2fllg apt6013lfllg.pdf

APT6013B2FLLAPT6013LFLL600V 43A 0.130B2FLLR POWER MOS 7 FREDFETT-MAXTO-264Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesL
apt6013b2fll.pdf

APT6013B2FLLAPT6013LFLL600V 43A 0.130WTMFREDFET POWER MOS 7B2FLLPower MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchingT-MAXTO-264losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptiona
apt6013b2fll.pdf

isc N-Channel MOSFET Transistor APT6013B2FLLFEATURESDrain Current I = 43A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.13(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu
apt6013b2ll.pdf

APT6013B2LLAPT6013LLL600V 43A 0.130WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast swi
Другие MOSFET... APT58M80J , APT5F100K , APT6010B2FLLG , APT6010B2LLG , APT6010LFLLG , APT6010LLLG , APT6011B2VFRG , APT6011LVFRG , RFP50N06 , APT6013B2LLG , APT6013LFLLG , APT6013LLLG , APT6015B2VFRG , APT6015JVFR , APT6015LVFRG , APT6017B2FLLG , APT6017B2LLG .
History: AUIRFSL8403 | HTJ600N06 | PSMN5R0-100PS | VBE1638 | MMQ60R115PTH | PH6325L
History: AUIRFSL8403 | HTJ600N06 | PSMN5R0-100PS | VBE1638 | MMQ60R115PTH | PH6325L



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