All MOSFET. APT6013B2FLLG Datasheet

 

APT6013B2FLLG Datasheet and Replacement


   Type Designator: APT6013B2FLLG
   Type of Transistor: MOFETS
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 565 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 43 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 1060 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: TO-247
 
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APT6013B2FLLG Datasheet (PDF)

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APT6013B2FLLG

APT6013B2FLLAPT6013LFLL600V 43A 0.130B2FLLR POWER MOS 7 FREDFETT-MAXTO-264Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesL

 2.1. Size:70K  apt
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APT6013B2FLLG

APT6013B2FLLAPT6013LFLL600V 43A 0.130WTMFREDFET POWER MOS 7B2FLLPower MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchingT-MAXTO-264losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptiona

 2.2. Size:376K  inchange semiconductor
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APT6013B2FLLG

isc N-Channel MOSFET Transistor APT6013B2FLLFEATURESDrain Current I = 43A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.13(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

 5.1. Size:69K  apt
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APT6013B2FLLG

APT6013B2LLAPT6013LLL600V 43A 0.130WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast swi

Datasheet: APT58M80J , APT5F100K , APT6010B2FLLG , APT6010B2LLG , APT6010LFLLG , APT6010LLLG , APT6011B2VFRG , APT6011LVFRG , RFP50N06 , APT6013B2LLG , APT6013LFLLG , APT6013LLLG , APT6015B2VFRG , APT6015JVFR , APT6015LVFRG , APT6017B2FLLG , APT6017B2LLG .

History: WFD2N60B | 2SK4068-01

Keywords - APT6013B2FLLG MOSFET datasheet

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