APT6015LVFRG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT6015LVFRG
Tipo de FET: MOFETS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 520 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 38 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 13 nS
Cossⓘ - Capacitancia de salida: 900 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
Paquete / Cubierta: TO-264
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APT6015LVFRG Datasheet (PDF)
apt6015b2vfrg apt6015lvfrg.pdf

APT6015B2VFRAPT6015LVFR600V 38A 0.150B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.
apt6015lvfr.pdf

APT6015LVFR600V 38A 0.150WPOWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Teste
apt6015lvfr.pdf

isc N-Channel MOSFET Transistor APT6015LVFRFEATURESDrain Current I = 38A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.15(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
apt6015lvr.pdf

APT6015LVR600V 38A 0.150POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout..D Faster Switching 100% Avalanche Tested Lowe
Otros transistores... APT6011B2VFRG , APT6011LVFRG , APT6013B2FLLG , APT6013B2LLG , APT6013LFLLG , APT6013LLLG , APT6015B2VFRG , APT6015JVFR , AO4407 , APT6017B2FLLG , APT6017B2LLG , APT6017LFLLG , APT6017LLLG , APT6018JN , APT6021BFLLG , APT6021BLLG , APT6021SFLLG .
History: FDFS6N548 | NTMFS0D8N02P1ET1G | CSD17577Q3A | NCEP40T13AGU | MEE4294-G | CJ3404 | FTK1013
History: FDFS6N548 | NTMFS0D8N02P1ET1G | CSD17577Q3A | NCEP40T13AGU | MEE4294-G | CJ3404 | FTK1013



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