APT6015LVFRG - Даташиты. Аналоги. Основные параметры
Наименование производителя: APT6015LVFRG
Тип транзистора: MOFETS
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 520 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 38 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 13 ns
Cossⓘ - Выходная емкость: 900 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.15 Ohm
Тип корпуса: TO-264
Аналог (замена) для APT6015LVFRG
APT6015LVFRG Datasheet (PDF)
apt6015b2vfrg apt6015lvfrg.pdf

APT6015B2VFRAPT6015LVFR600V 38A 0.150B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.
apt6015lvfr.pdf

APT6015LVFR600V 38A 0.150WPOWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Teste
apt6015lvfr.pdf

isc N-Channel MOSFET Transistor APT6015LVFRFEATURESDrain Current I = 38A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.15(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
apt6015lvr.pdf

APT6015LVR600V 38A 0.150POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout..D Faster Switching 100% Avalanche Tested Lowe
Другие MOSFET... APT6011B2VFRG , APT6011LVFRG , APT6013B2FLLG , APT6013B2LLG , APT6013LFLLG , APT6013LLLG , APT6015B2VFRG , APT6015JVFR , AO4407 , APT6017B2FLLG , APT6017B2LLG , APT6017LFLLG , APT6017LLLG , APT6018JN , APT6021BFLLG , APT6021BLLG , APT6021SFLLG .
History: SI3401 | STB11NK40Z | 24NM60L-TF3-T | 2SK1010 | BF1210 | PTY10HN08 | 5N70K
History: SI3401 | STB11NK40Z | 24NM60L-TF3-T | 2SK1010 | BF1210 | PTY10HN08 | 5N70K



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