APT6015LVFRG Datasheet. Specs and Replacement

Type Designator: APT6015LVFRG  📄📄 

Type of Transistor: MOFETS

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 520 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 38 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 900 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: TO-264

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APT6015LVFRG datasheet

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 apt6015b2vfrg apt6015lvfrg.pdf pdf_icon

APT6015LVFRG

APT6015B2VFR APT6015LVFR 600V 38A 0.150 B2VFR POWER MOS V FREDFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. ... See More ⇒

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APT6015LVFRG

APT6015LVFR 600V 38A 0.150W POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Teste... See More ⇒

 3.2. Size:255K  inchange semiconductor
 apt6015lvfr.pdf pdf_icon

APT6015LVFRG

isc N-Channel MOSFET Transistor APT6015LVFR FEATURES Drain Current I = 38A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.15 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒

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 apt6015lvr.pdf pdf_icon

APT6015LVFRG

APT6015LVR 600V 38A 0.150 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.. D Faster Switching 100% Avalanche Tested Lowe... See More ⇒

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Detailed specifications: APT6011B2VFRG, APT6011LVFRG, APT6013B2FLLG, APT6013B2LLG, APT6013LFLLG, APT6013LLLG, APT6015B2VFRG, APT6015JVFR, 12N60, APT6017B2FLLG, APT6017B2LLG, APT6017LFLLG, APT6017LLLG, APT6018JN, APT6021BFLLG, APT6021BLLG, APT6021SFLLG

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