APT6015LVFRG Datasheet and Replacement. Cross Reference Search

APT6015LVFRG Datasheet (PDF)

..1. Size:113K apt
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APT6015B2VFRAPT6015LVFR600V 38A 0.150B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

3.1. Size:59K apt
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APT6015LVFR600V 38A 0.150WPOWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Teste

3.2. Size:255K inchange semiconductor
apt6015lvfr.pdf pdf_icon

isc N-Channel MOSFET Transistor APT6015LVFRFEATURESDrain Current I = 38A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.15(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

5.1. Size:62K apt
apt6015lvr.pdf pdf_icon

APT6015LVR600V 38A 0.150POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout..D Faster Switching 100% Avalanche Tested Lowe

Datasheet: APT6011B2VFRG , APT6011LVFRG , APT6013B2FLLG , APT6013B2LLG , APT6013LFLLG , APT6013LLLG , APT6015B2VFRG , APT6015JVFR , AO4407 , APT6017B2FLLG , APT6017B2LLG , APT6017LFLLG , APT6017LLLG , APT6018JN , APT6021BFLLG , APT6021BLLG , APT6021SFLLG .