APT6040SVR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT6040SVR
Tipo de FET: MOFETS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 250 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 16 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9 nS
Cossⓘ - Capacitancia de salida: 305 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
Paquete / Cubierta: D3PAK
Búsqueda de reemplazo de APT6040SVR MOSFET
APT6040SVR Datasheet (PDF)
apt6040svr.pdf

APT6040BVRAPT6040SVR600V 16A 0.400BVRPOWER MOS VD3PAKTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS VSVRalso achieves faster switching speeds through optimized gate layout.D Fast
apt6040svfr.pdf

600V 16A 0.40APT6040BVFR APT6040SVFRAPT6040BVFRG*APT6040SVFRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.BVFR POWER MOS V FREDFETD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementTO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS
apt6040bn.pdf

DTO-247GAPT6040BN 600V 18.0A 0.40SAPT6045BN 600V 17.0A 0.45POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 6040BN 6045BN UNITVDSS Drain-Source Voltage600 600 VoltsID Continuous Drain Current @ TC = 25C18 17AmpsIDM Pulsed Drain Current 172 68V
apt6040bvfr.pdf

APT6040BVFRAPT6040SVFR600V 16A 0.400BVFR POWER MOS V FREDFETD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementTO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.SVFR
Otros transistores... APT6033BN , APT6035BVFRG , APT6035SVFRG , APT6038BFLLG , APT6038BLLG , APT6038SFLLG , APT6038SLLG , APT6040SVFR , IRF520 , APT6045BN , APT6045BVFRG , APT6045SVFRG , APT6060AN , APT6070AN , APT60M75JVFR , APT60M75L2FLLG , APT60M75L2LLG .
History: SM7321ESKP | IPC100N04S5L-2R6 | FTK5N50D | AON7462 | IPA90R500C3 | IXFB82N60P | CJQ4459
History: SM7321ESKP | IPC100N04S5L-2R6 | FTK5N50D | AON7462 | IPA90R500C3 | IXFB82N60P | CJQ4459



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JBE084M | JBE083NS | JBE083M | JMH70R430AK | JMH70R430AF | JMH65R980APLN | JMH65R980AKQ | JMH65R980AK | JMH65R980AF | JMH65R980ACFP | JMH65R640AK | JMH65R600MK | JMH65R600MF | JMPL1025AK | JMPL1025AE | JMPL0648PKQ
Popular searches
2sc1312 datasheet | 2sb647 | k3561 transistor | c3203 transistor | irfp450 equivalent | 2sb649 | 2sb324 transistor | b754 transistor