APT6040SVR
MOSFET. Datasheet pdf. Equivalent
Type Designator: APT6040SVR
Type of Transistor: MOFETS
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 250
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 16
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 115
nC
trⓘ - Rise Time: 9
nS
Cossⓘ -
Output Capacitance: 305
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4
Ohm
Package:
D3PAK
APT6040SVR
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT6040SVR
Datasheet (PDF)
..1. Size:58K apt
apt6040svr.pdf ![pdf_icon](https://alltransistors.com/ad/pdf_icon.gif)
APT6040BVRAPT6040SVR600V 16A 0.400BVRPOWER MOS VD3PAKTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS VSVRalso achieves faster switching speeds through optimized gate layout.D Fast
5.1. Size:106K apt
apt6040svfr.pdf ![pdf_icon](https://alltransistors.com/ad/pdf_icon.gif)
600V 16A 0.40APT6040BVFR APT6040SVFRAPT6040BVFRG*APT6040SVFRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.BVFR POWER MOS V FREDFETD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementTO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS
7.1. Size:50K apt
apt6040bn.pdf ![pdf_icon](https://alltransistors.com/ad/pdf_icon.gif)
DTO-247GAPT6040BN 600V 18.0A 0.40SAPT6045BN 600V 17.0A 0.45POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 6040BN 6045BN UNITVDSS Drain-Source Voltage600 600 VoltsID Continuous Drain Current @ TC = 25C18 17AmpsIDM Pulsed Drain Current 172 68V
7.2. Size:113K apt
apt6040bvfr.pdf ![pdf_icon](https://alltransistors.com/ad/pdf_icon.gif)
APT6040BVFRAPT6040SVFR600V 16A 0.400BVFR POWER MOS V FREDFETD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementTO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.SVFR
7.3. Size:57K apt
apt6040bvr.pdf ![pdf_icon](https://alltransistors.com/ad/pdf_icon.gif)
APT6040BVRAPT6040SVR600V 16A 0.400BVRPOWER MOS VD3PAKTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS VSVRalso achieves faster switching speeds through optimized gate layout.D Fast
7.4. Size:50K apt
apt6040.pdf ![pdf_icon](https://alltransistors.com/ad/pdf_icon.gif)
DTO-247GAPT6040BN 600V 18.0A 0.40SAPT6045BN 600V 17.0A 0.45POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 6040BN 6045BN UNITVDSS Drain-Source Voltage600 600 VoltsID Continuous Drain Current @ TC = 25C18 17AmpsIDM Pulsed Drain Current 172 68V
Datasheet: WPB4002
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