APT66F60B2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT66F60B2
Tipo de FET: MOFETS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1135 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 70 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 85 nS
Cossⓘ - Capacitancia de salida: 1210 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
Paquete / Cubierta: TO-247
Búsqueda de reemplazo de APT66F60B2 MOSFET
APT66F60B2 PDF Specs
apt66f60b2 apt66f60l.pdf
APT66F60B2 APT66F60L 600V, 70A, 0.09 Max, trr 310ns N-Channel FREDFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate r... See More ⇒
apt66f60b2.pdf
isc N-Channel MOSFET Transistor APT66F60B2 FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.09 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒
apt66f60l.pdf
isc N-Channel MOSFET Transistor APT66F60L FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.09 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒
apt66m60b2 apt66m60l.pdf
APT66M60B2 APT66M60L 600V, 70A, 0.09 Max N-Channel MOSFET T-MaxTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capa... See More ⇒
Otros transistores... APT6070AN , APT60M75JVFR , APT60M75L2FLLG , APT60M75L2LLG , APT60M80L2VFRG , APT60M80L2VRG , APT60N60BCSG , APT60N90JC3 , K2611 , APT66F60L , APT66M60B2 , APT66M60L , APT6M100K , APT7575AN , APT7575BN , APT7590AN , APT7590BN .
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