APT66F60B2 Datasheet PDF and Equivalents Search

 ..1. Size:212K  microsemi
 apt66f60b2 apt66f60l.pdf

APT66F60B2 APT66F60L 600V, 70A, 0.09 Max, trr 310ns N-Channel FREDFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate r... See More ⇒

 ..2. Size:375K  inchange semiconductor
 apt66f60b2.pdf

isc N-Channel MOSFET Transistor APT66F60B2 FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.09 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒

 6.1. Size:255K  inchange semiconductor
 apt66f60l.pdf

isc N-Channel MOSFET Transistor APT66F60L FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.09 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

 9.1. Size:115K  microsemi
 apt66m60b2 apt66m60l.pdf

APT66M60B2 APT66M60L 600V, 70A, 0.09 Max N-Channel MOSFET T-MaxTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capa... See More ⇒

 9.2. Size:255K  inchange semiconductor
 apt66m60l.pdf

isc N-Channel MOSFET Transistor APT66M60L FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.09 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

 9.3. Size:375K  inchange semiconductor
 apt66m60b2.pdf

isc N-Channel MOSFET Transistor APT66M60B2 FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.09 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒