APT66F60B2 datasheet, аналоги, основные параметры

Наименование производителя: APT66F60B2  📄📄 

Тип транзистора: MOFETS

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1135 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 70 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 85 ns

Cossⓘ - Выходная емкость: 1210 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.09 Ohm

Тип корпуса: TO-247

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Аналог (замена) для APT66F60B2

- подборⓘ MOSFET транзистора по параметрам

 

APT66F60B2 даташит

 ..1. Size:212K  microsemi
 apt66f60b2 apt66f60l.pdf pdf_icon

APT66F60B2

APT66F60B2 APT66F60L 600V, 70A, 0.09 Max, trr 310ns N-Channel FREDFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate r

 ..2. Size:375K  inchange semiconductor
 apt66f60b2.pdf pdf_icon

APT66F60B2

isc N-Channel MOSFET Transistor APT66F60B2 FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.09 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 6.1. Size:255K  inchange semiconductor
 apt66f60l.pdf pdf_icon

APT66F60B2

isc N-Channel MOSFET Transistor APT66F60L FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.09 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.1. Size:115K  microsemi
 apt66m60b2 apt66m60l.pdf pdf_icon

APT66F60B2

APT66M60B2 APT66M60L 600V, 70A, 0.09 Max N-Channel MOSFET T-MaxTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capa

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