APT66F60B2 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APT66F60B2
Тип транзистора: MOFETS
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1135 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 70 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 85 ns
Cossⓘ - Выходная емкость: 1210 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.09 Ohm
Тип корпуса: TO-247
- подбор MOSFET транзистора по параметрам
APT66F60B2 Datasheet (PDF)
apt66f60b2 apt66f60l.pdf

APT66F60B2 APT66F60L 600V, 70A, 0.09 Max, trr 310ns N-Channel FREDFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate r
apt66f60b2.pdf

isc N-Channel MOSFET Transistor APT66F60B2FEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.09(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
apt66f60l.pdf

isc N-Channel MOSFET Transistor APT66F60LFEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.09(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
apt66m60b2 apt66m60l.pdf

APT66M60B2 APT66M60L 600V, 70A, 0.09 MaxN-Channel MOSFET T-MaxTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capa
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: 4N60AS | DG840 | IRLU3715 | SDF120JDA-D | KNB1906A | FDPF8N50NZU | NCE01H10
History: 4N60AS | DG840 | IRLU3715 | SDF120JDA-D | KNB1906A | FDPF8N50NZU | NCE01H10



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