APT66M60B2 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT66M60B2  📄📄 

Tipo de FET: MOFETS

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1135 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 70 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 85 nS

Cossⓘ - Capacitancia de salida: 1210 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm

Encapsulados: TO-247

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APT66M60B2 datasheet

 ..1. Size:115K  microsemi
 apt66m60b2 apt66m60l.pdf pdf_icon

APT66M60B2

APT66M60B2 APT66M60L 600V, 70A, 0.09 Max N-Channel MOSFET T-MaxTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capa

 ..2. Size:375K  inchange semiconductor
 apt66m60b2.pdf pdf_icon

APT66M60B2

isc N-Channel MOSFET Transistor APT66M60B2 FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.09 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 6.1. Size:255K  inchange semiconductor
 apt66m60l.pdf pdf_icon

APT66M60B2

isc N-Channel MOSFET Transistor APT66M60L FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.09 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.1. Size:212K  microsemi
 apt66f60b2 apt66f60l.pdf pdf_icon

APT66M60B2

APT66F60B2 APT66F60L 600V, 70A, 0.09 Max, trr 310ns N-Channel FREDFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate r

MOSTRAR MÁS

Otros transistores... APT60M75L2FLLG, APT60M75L2LLG, APT60M80L2VFRG, APT60M80L2VRG, APT60N60BCSG, APT60N90JC3, APT66F60B2, APT66F60L, 3401, APT66M60L, APT6M100K, APT7575AN, APT7575BN, APT7590AN, APT7590BN, APT75F50B2, APT75F50L