APT66M60B2 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APT66M60B2
Тип транзистора: MOFETS
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 1135 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 70 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 85 ns
Cossⓘ - Выходная емкость: 1210 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.09 Ohm
Тип корпуса: TO-247
Аналог (замена) для APT66M60B2
APT66M60B2 Datasheet (PDF)
apt66m60b2 apt66m60l.pdf

APT66M60B2 APT66M60L 600V, 70A, 0.09 MaxN-Channel MOSFET T-MaxTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capa
apt66m60b2.pdf

isc N-Channel MOSFET Transistor APT66M60B2FEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.09(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
apt66m60l.pdf

isc N-Channel MOSFET Transistor APT66M60LFEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.09(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
apt66f60b2 apt66f60l.pdf

APT66F60B2 APT66F60L 600V, 70A, 0.09 Max, trr 310ns N-Channel FREDFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate r
Другие MOSFET... APT60M75L2FLLG , APT60M75L2LLG , APT60M80L2VFRG , APT60M80L2VRG , APT60N60BCSG , APT60N90JC3 , APT66F60B2 , APT66F60L , MMD60R360PRH , APT66M60L , APT6M100K , APT7575AN , APT7575BN , APT7590AN , APT7590BN , APT75F50B2 , APT75F50L .
History: 2SK3034 | FTS2057



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