All MOSFET. APT66M60B2 Datasheet

 

APT66M60B2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT66M60B2
   Type of Transistor: MOFETS
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1135 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 330 nC
   trⓘ - Rise Time: 85 nS
   Cossⓘ - Output Capacitance: 1210 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO-247

 APT66M60B2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT66M60B2 Datasheet (PDF)

 ..1. Size:115K  microsemi
 apt66m60b2 apt66m60l.pdf

APT66M60B2 APT66M60B2

APT66M60B2 APT66M60L 600V, 70A, 0.09 MaxN-Channel MOSFET T-MaxTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capa

 ..2. Size:375K  inchange semiconductor
 apt66m60b2.pdf

APT66M60B2 APT66M60B2

isc N-Channel MOSFET Transistor APT66M60B2FEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.09(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 6.1. Size:255K  inchange semiconductor
 apt66m60l.pdf

APT66M60B2 APT66M60B2

isc N-Channel MOSFET Transistor APT66M60LFEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.09(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 9.1. Size:212K  microsemi
 apt66f60b2 apt66f60l.pdf

APT66M60B2 APT66M60B2

APT66F60B2 APT66F60L 600V, 70A, 0.09 Max, trr 310ns N-Channel FREDFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate r

 9.2. Size:375K  inchange semiconductor
 apt66f60b2.pdf

APT66M60B2 APT66M60B2

isc N-Channel MOSFET Transistor APT66F60B2FEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.09(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 9.3. Size:255K  inchange semiconductor
 apt66f60l.pdf

APT66M60B2 APT66M60B2

isc N-Channel MOSFET Transistor APT66F60LFEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.09(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: TK30A06J3

 

 
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