RFD15P05 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: RFD15P05
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 80 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 300 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
   Paquete / Cubierta: TO251AA

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RFD15P05 Datasheet (PDF)

..1. Size:805K cn vbsemi
rfd15p05.pdf

RFD15P05www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.066 at VGS = - 10 V - 20APPLICATIONS- 60 40 nC at VGS = - 4.5 V - 180.080 Load SwitchTO-251SGDP-Channel MOSFETG D STop ViewABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Par

0.1. Size:87K intersil
rfd15p05-sm rfp15p05.pdf

RFD15P05, RFD15P05SM, RFP15P05Data Sheet July 1999 File Number 2387.515A, 50V, 0.150 Ohm, P-Channel Power FeaturesMOSFETs 15A, 50VThese are P-Channel power MOSFETs manufactured using rDS(ON) = 0.150the MegaFET process. This process which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, givesoptimum utilizatio

0.2. Size:828K cn vbsemi
rfd15p05sm.pdf

RFD15P05SMwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Sy

7.1. Size:87K intersil
rfd15p06-sm rfp15p06.pdf

RFD15P06, RFD15P06SM, RFP15P06Data Sheet July 1999 File Number 3988.315A, 60V, 0.150 Ohm, P-Channel Power FeaturesMOSFETs 15A, 60VThese P-Channel power MOSFETs are manufactured using rDS(ON) = 0.150the MegaFET process. This process which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, givesoptimum utilizatio

Otros transistores... RFD14N05 , RFD14N05L , RFD14N05LSM , RFD14N05SM , RFD14N06L , RFD14N06LSM , RFD15N06LE , RFD15N06LESM , 5N65 , RFD15P06 , RFD15P06SM , RFD16N03L , RFD16N03LSM , RFD16N05 , RFD16N05L , RFD16N05LSM , RFD16N05SM .

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