RFD15P05 Specs and Replacement

Type Designator: RFD15P05

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 80 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: TO251AA

RFD15P05 substitution

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RFD15P05 datasheet

 ..1. Size:805K  cn vbsemi
 rfd15p05.pdf pdf_icon

RFD15P05

RFD15P05 www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested 0.066 at VGS = - 10 V - 20 APPLICATIONS - 60 40 nC at VGS = - 4.5 V - 18 0.080 Load Switch TO-251 S G D P-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Par... See More ⇒

 0.1. Size:87K  intersil
 rfd15p05-sm rfp15p05.pdf pdf_icon

RFD15P05

RFD15P05, RFD15P05SM, RFP15P05 Data Sheet July 1999 File Number 2387.5 15A, 50V, 0.150 Ohm, P-Channel Power Features MOSFETs 15A, 50V These are P-Channel power MOSFETs manufactured using rDS(ON) = 0.150 the MegaFET process. This process which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits, gives optimum utilizatio... See More ⇒

 0.2. Size:828K  cn vbsemi
 rfd15p05sm.pdf pdf_icon

RFD15P05

RFD15P05SM www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Sy... See More ⇒

 7.1. Size:87K  intersil
 rfd15p06-sm rfp15p06.pdf pdf_icon

RFD15P05

RFD15P06, RFD15P06SM, RFP15P06 Data Sheet July 1999 File Number 3988.3 15A, 60V, 0.150 Ohm, P-Channel Power Features MOSFETs 15A, 60V These P-Channel power MOSFETs are manufactured using rDS(ON) = 0.150 the MegaFET process. This process which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits, gives optimum utilizatio... See More ⇒

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Detailed specifications: RFD14N05, RFD14N05L, RFD14N05LSM, RFD14N05SM, RFD14N06L, RFD14N06LSM, RFD15N06LE, RFD15N06LESM, AOD4184A, RFD15P06, RFD15P06SM, RFD16N03L, RFD16N03LSM, RFD16N05, RFD16N05L, RFD16N05LSM, RFD16N05SM

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