RFD15P05
MOSFET. Datasheet pdf. Equivalent
Type Designator: RFD15P05
Marking Code: D15P05
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 80
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 15
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 150(max)
nC
trⓘ - Rise Time: 30
nS
Cossⓘ -
Output Capacitance: 300
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15
Ohm
Package:
TO251AA
RFD15P05
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RFD15P05
Datasheet (PDF)
..1. Size:805K cn vbsemi
rfd15p05.pdf
RFD15P05www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.066 at VGS = - 10 V - 20APPLICATIONS- 60 40 nC at VGS = - 4.5 V - 180.080 Load SwitchTO-251SGDP-Channel MOSFETG D STop ViewABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Par
0.1. Size:87K intersil
rfd15p05-sm rfp15p05.pdf
RFD15P05, RFD15P05SM, RFP15P05Data Sheet July 1999 File Number 2387.515A, 50V, 0.150 Ohm, P-Channel Power FeaturesMOSFETs 15A, 50VThese are P-Channel power MOSFETs manufactured using rDS(ON) = 0.150the MegaFET process. This process which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, givesoptimum utilizatio
0.2. Size:828K cn vbsemi
rfd15p05sm.pdf
RFD15P05SMwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Sy
7.1. Size:87K intersil
rfd15p06-sm rfp15p06.pdf
RFD15P06, RFD15P06SM, RFP15P06Data Sheet July 1999 File Number 3988.315A, 60V, 0.150 Ohm, P-Channel Power FeaturesMOSFETs 15A, 60VThese P-Channel power MOSFETs are manufactured using rDS(ON) = 0.150the MegaFET process. This process which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, givesoptimum utilizatio
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