APT94N65B2C6 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT94N65B2C6  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 833 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 95 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 59 nS

Cossⓘ - Capacitancia de salida: 5451 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm

Encapsulados: TO-247

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APT94N65B2C6 datasheet

 ..1. Size:159K  microsemi
 apt94n65b2c6 apt94n65lc6.pdf pdf_icon

APT94N65B2C6

APT94N65B2C6 APT94N65LC6 650V 94A 0.035 APT94N65B2C6 Super Junction MOSFET T-Max TO-264 Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated APT94N65LC6 Extreme dv/dt Rated D G Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with S two parallel MOSFET die. I

 3.1. Size:145K  microsemi
 apt94n65b2c3g.pdf pdf_icon

APT94N65B2C6

650V 94A APT94N65B2C3 APT94N65B2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. COOLMOS Power Semiconductors Super Junction MOSFET T-MaxTM Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated D Extreme dv/dt Rated Dual die (parallel) G Popular T-MAX Package S Unless stated otherwise, Microsemi di

 7.1. Size:168K  apt
 apt94n60l2c3.pdf pdf_icon

APT94N65B2C6

APT94N60L2C3 600V 94A 0.035 Super Junction MOSFET TO-264 Max COOLMOS Power Semiconductors Ultra low RDS(ON) Low Miller Capacitance D Ultra Low Gate Charge, Qg G Avalanche Energy Rated TO-264 Max Package S MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT94N60L2C3 UNIT VDSS Drain-Source Voltage 60

 7.2. Size:250K  microsemi
 apt94n60l2c3g.pdf pdf_icon

APT94N65B2C6

APT94N60L2C3 600V 94A 0.035 Super Junction MOSFET TO-264 Max COOLMOS Power Semiconductors Ultra low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg D Avalanche Energy Rated TO-264 Max Package G Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with S two parallel MOSFET die. It

MOSTRAR MÁS

Otros transistores... APT902R4BN, APT902RBN, APT904R2AN, APT904R2BN, APT904RAN, APT904RBN, APT94N60L2C3G, APT94N65B2C3G, IRFP250, APT94N65LC6, APT97N65B2C6, APT97N65LC6, APT9F100B, APT9F100S, APT9M100B, APT9M100S, APTC60AM18SCG