APT94N65B2C6 MOSFET PDF: N-Ch, 650V, 95A. Full specification with pinout and replacement list

APT94N65B2C6 PDF Specs and Replacement

   Type Designator: APT94N65B2C6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 833 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 95 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 59 nS
   Cossⓘ - Output Capacitance: 5451 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO-247

APT94N65B2C6 substitution

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APT94N65B2C6 PDF Specs

..1. Size:159K microsemi
apt94n65b2c6 apt94n65lc6.pdf pdf_icon

APT94N65B2C6 APT94N65LC6 650V 94A 0.035 APT94N65B2C6 Super Junction MOSFET T-Max TO-264 Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated APT94N65LC6 Extreme dv/dt Rated D G Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with S two parallel MOSFET die. I... See More ⇒

3.1. Size:145K microsemi
apt94n65b2c3g.pdf pdf_icon

650V 94A APT94N65B2C3 APT94N65B2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. COOLMOS Power Semiconductors Super Junction MOSFET T-MaxTM Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated D Extreme dv/dt Rated Dual die (parallel) G Popular T-MAX Package S Unless stated otherwise, Microsemi di... See More ⇒

7.1. Size:168K apt
apt94n60l2c3.pdf pdf_icon

APT94N60L2C3 600V 94A 0.035 Super Junction MOSFET TO-264 Max COOLMOS Power Semiconductors Ultra low RDS(ON) Low Miller Capacitance D Ultra Low Gate Charge, Qg G Avalanche Energy Rated TO-264 Max Package S MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT94N60L2C3 UNIT VDSS Drain-Source Voltage 60... See More ⇒

7.2. Size:250K microsemi
apt94n60l2c3g.pdf pdf_icon

APT94N60L2C3 600V 94A 0.035 Super Junction MOSFET TO-264 Max COOLMOS Power Semiconductors Ultra low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg D Avalanche Energy Rated TO-264 Max Package G Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with S two parallel MOSFET die. It... See More ⇒

Detailed specifications: APT902R4BN , APT902RBN , APT904R2AN , APT904R2BN , APT904RAN , APT904RBN , APT94N60L2C3G , APT94N65B2C3G , 4N60 , APT94N65LC6 , APT97N65B2C6 , APT97N65LC6 , APT9F100B , APT9F100S , APT9M100B , APT9M100S , APTC60AM18SCG .