APT94N65B2C6 - аналоги, параметры транзистора

APT94N65B2C6 технические параметры

..1. Size:159K microsemi
apt94n65b2c6 apt94n65lc6.pdf pdf_icon

APT94N65B2C6 APT94N65LC6 650V 94A 0.035 APT94N65B2C6 Super Junction MOSFET T-Max TO-264 Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated APT94N65LC6 Extreme dv/dt Rated D G Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with S two parallel MOSFET die. I

3.1. Size:145K microsemi
apt94n65b2c3g.pdf pdf_icon

650V 94A APT94N65B2C3 APT94N65B2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. COOLMOS Power Semiconductors Super Junction MOSFET T-MaxTM Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated D Extreme dv/dt Rated Dual die (parallel) G Popular T-MAX Package S Unless stated otherwise, Microsemi di

7.1. Size:168K apt
apt94n60l2c3.pdf pdf_icon

APT94N60L2C3 600V 94A 0.035 Super Junction MOSFET TO-264 Max COOLMOS Power Semiconductors Ultra low RDS(ON) Low Miller Capacitance D Ultra Low Gate Charge, Qg G Avalanche Energy Rated TO-264 Max Package S MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT94N60L2C3 UNIT VDSS Drain-Source Voltage 60

7.2. Size:250K microsemi
apt94n60l2c3g.pdf pdf_icon

APT94N60L2C3 600V 94A 0.035 Super Junction MOSFET TO-264 Max COOLMOS Power Semiconductors Ultra low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg D Avalanche Energy Rated TO-264 Max Package G Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with S two parallel MOSFET die. It

Другие MOSFET... APT902R4BN , APT902RBN , APT904R2AN , APT904R2BN , APT904RAN , APT904RBN , APT94N60L2C3G , APT94N65B2C3G , 4N60 , APT94N65LC6 , APT97N65B2C6 , APT97N65LC6 , APT9F100B , APT9F100S , APT9M100B , APT9M100S , APTC60AM18SCG .