7N10L-AA3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 7N10L-AA3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 5.8 nC
   trⓘ - Tiempo de subida: 24 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm
   Paquete / Cubierta: SOT223

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7N10L-AA3 Datasheet (PDF)

9.1. Size:625K fairchild semi
fqd7n10ltf fqd7n10ltm fqd7n10l fqu7n10l fqu7n10ltu.pdf

October 2008QFETFQD7N10L / FQU7N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.8A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.6 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology is especia

9.2. Size:544K fairchild semi
fqp7n10l.pdf

December 2000TMQFETQFETQFETQFETFQP7N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.3A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.6 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology

9.3. Size:640K fairchild semi
fqt7n10ltf.pdf

May 2001TMQFETFQT7N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.7A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.6 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tai

9.4. Size:642K fairchild semi
fqt7n10l.pdf

9.5. Size:554K fairchild semi
fqpf7n10l.pdf

December 2000TMQFETQFETQFETQFETFQPF7N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.6 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology

9.6. Size:554K fairchild semi
fqb7n10ltm fqi7n10ltu.pdf

December 2000TMQFETQFETQFETQFETFQB7N10L / FQI7N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.3A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.6 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced

9.7. Size:881K onsemi
fqt7n10l.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

9.8. Size:220K utc
7n10l 7n10g.pdf

UNISONIC TECHNOLOGIES CO., LTD 7N10 Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performanceand minimum on-state resistance. The UTC 7N10 uses planar stripeand DMOS technology to provide perfect quality. This device can also withstand high energy pulse in the

9.9. Size:136K harris semi
rfd7n10le-sm rfp7n10le.pdf

RFD7N10LE, RFD7N10LESMS E M I C O N D U C T O RRFP7N10LE7A, 100V, ESD Rated, Avalanche Rated, Logic LevelN-Channel Enhancement-Mode Power MOSFETs (MegaFETs)February 1994Features PackagingJEDEC TO-220AB 7A, 100VTOP VIEW rDS(ON) = 0.300SOURCE 2KV ESD ProtectedDRAINDRAIN(FLANGE) Temperature Compensating PSPICE Model GATE Can be Driven Directly fr

9.10. Size:101K intersil
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RFD7N10LE, RFD7N10LESMData Sheet October 1999 File Number 3598.37A, 100V, 0.300 Ohm, N-Channel, Logic FeaturesLevel, Power MOSFETs 7A, 100VThese N-Channel power MOSFETs are manufactured using rDS(ON) = 0.300a modern process. This process, which uses feature sizes Temperature Compensating PSPICE Modelapproaching those of LSI integrated circuits gives optimumutil

9.11. Size:1198K tysemi
kx7n10l.pdf

SMDType MOSFETDIP Type MOSFETSMDType MOSFETDIP Type MOSFETSMD Type ICSMD Type ICProduct specificationKX7N10LSOT-223Unit: mm Features3.50+0.26.50+0.2 -0.2-0.2 VDS (V) = 100V ID = 1.7 A (VGS = 10V)0.90+0.2-0.2 350m (V = 10V), I =0.85ADS(ON) GS D +0.1 R 3.00-0.17.00+0.3-0.3 380m (V = 5V), I =0.85ADS(ON) GS D R 4

9.12. Size:884K cn vbsemi
fqd7n10l.pdf

FQD7N10Lwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS

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