7N10L-AA3 - описание и поиск аналогов

October 2008 QFET FQD7N10L / FQU7N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.8A, 100V, RDS(on) = 0.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.6 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology is especia

December 2000 TM QFET QFET QFET QFET FQP7N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.3A, 100V, RDS(on) = 0.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.6 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology

May 2001 TM QFET FQT7N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.7A, 100V, RDS(on) = 0.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.6 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tai

May 2001 TM QFET FQT7N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.7A, 100V, RDS(on) = 0.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.6 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tai

December 2000 TM QFET QFET QFET QFET FQPF7N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.5A, 100V, RDS(on) = 0.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.6 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology

December 2000 TM QFET QFET QFET QFET FQB7N10L / FQI7N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.3A, 100V, RDS(on) = 0.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.6 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

UNISONIC TECHNOLOGIES CO., LTD 7N10 Power MOSFET 7A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N10 is an N-Channel enhancement mode power MOSFET, providing customers with excellent switching performance and minimum on-state resistance. The UTC 7N10 uses planar stripe and DMOS technology to provide perfect quality. This device can also withstand high energy pulse in the

RFD7N10LE, RFD7N10LESM S E M I C O N D U C T O R RFP7N10LE 7A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs (MegaFETs) February 1994 Features Packaging JEDEC TO-220AB 7A, 100V TOP VIEW rDS(ON) = 0.300 SOURCE 2KV ESD Protected DRAIN DRAIN (FLANGE) Temperature Compensating PSPICE Model GATE Can be Driven Directly fr

RFD7N10LE, RFD7N10LESM Data Sheet October 1999 File Number 3598.3 7A, 100V, 0.300 Ohm, N-Channel, Logic Features Level, Power MOSFETs 7A, 100V These N-Channel power MOSFETs are manufactured using rDS(ON) = 0.300 a modern process. This process, which uses feature sizes Temperature Compensating PSPICE Model approaching those of LSI integrated circuits gives optimum util

SMDType MOSFET DIP Type MOSFET SMDType MOSFET DIP Type MOSFET SMD Type IC SMD Type IC Product specification KX7N10L SOT-223 Unit mm Features 3.50+0.2 6.50+0.2 -0.2 -0.2 VDS (V) = 100V ID = 1.7 A (VGS = 10V) 0.90+0.2 -0.2 350m (V = 10V), I =0.85A DS(ON) GS D +0.1 R 3.00-0.1 7.00+0.3 -0.3 380m (V = 5V), I =0.85A DS(ON) GS D R 4

FQD7N10L www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS